A Nested Reactive Feedback Power Amplifier for Q-band Operation
نویسندگان
چکیده
A power amplifier topology is presented that incorporates a feedback network around the active device that can be tuned for smalland large-signal circuit operation. The PA is fabricated in a 120-nm SiGe BiCMOS process and from 37-47 GHz. The PA achieves a saturated output power of 23 dBm and a peak PAE of 20% at 38 GHz.
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